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They are designed for high-speed switching applications at collector currents up to mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages. Information furnished is believed to be accurate and reliable.
However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.
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2N2218 Datasheet PDF - Comset Semiconductors