F3055L DATASHEET PDF

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Data Sheet. January This process, which uses feature sizes. They were. These transistors can be operated directly from. Formerly developmental type TA Ordering Information. NOTE: When ordering, use the entire part number. Drain to Source Voltage Note 1.

V DSS. V DGR. Gate to Source Voltage. Continuous Drain Current. Pulsed Drain Current Note 3. Refer to Peak Current Curve. Single Pulse Avalanche Rating. Refer to UIS Curve. Power Dissipation. Derate Above 25 o C. Operating and Storage Temperature. Maximum Temperature for Soldering. Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress only rating and operation of the. Drain to Source Breakdown Voltage. Gate Threshold Voltage. Zero Gate Voltage Drain Current.

Gate to Source Leakage Current. Drain to Source On Resistance Note 2. Turn-On Time. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Turn-Off Time. Total Gate Charge.

Gate Charge at 5V. Threshold Gate Charge. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Thermal Resistance Junction to Case. Thermal Resistance Junction to Ambient. BV DSS.

V GS TH. I DSS. I GSS. Q g TOT. C ISS. C OSS. C RSS. Figures 10, 18, Figures 20, Figure Source to Drain Diode Voltage. Diode Reverse Recovery Time. Repetitive Rating: Pulse Width limited by max junction temperature. Capability Curve Figure 5. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.

These transistors can be operated directly from integrated circuits. NOTE: 1.

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